Doklevsli
1200V 40mΩ SiC MOSFET TO-247-4 Silicon Carbide Power Transistor (SiC Diode 10A 650V TO-220-2)
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Description
- Silicon Carbide (SiC) MOSFET rated 1200V with low on-resistance 40mΩ, suitable for high efficiency power switching and energy conversion applications.
- TO-247-4 package design provides improved thermal performance and stable high-power operation for industrial electronic systems.
- Suitable for power supply systems, motor drives, inverters and high-voltage switching circuits requiring fast response and low loss performance.
- Wide bandgap semiconductor structure enables higher efficiency, better thermal stability and reduced switching losses compared to traditional silicon devices.
- Designed for industrial electronics, power management systems and advanced energy conversion applications in engineering and research environments.
Technical Specifications
Manufacturer
Doklevsli
Model
SiC Diode 10A 650V TO-220-2
Height
0.4 cm
Length
10.5 cm
Width
2.4 cm
Weight
0.01 kg
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.