Bridgold 10pcs IRF510PBF IRF510 510 N Channel Power MOSFET Transistor,5.6 A/100 V TO-220
Product Description
Bridgold 10pcs IRF510PBF IRF510 510 N Channel Power MOSFET Transistor,5.6 A/100 V TO-220
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
Third-generation power MOSFETs feature rugged device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry
Continuous Drain Current Id:5.6A
Drain Source Voltage Vds:100V
On Resistance Rds(on):0.54ohm
Rds(on) Test Voltage Vgs:10V
Operating Temperature Max:175°C
Dimensions:10.41 x 4.7 x 9.01mm
Maximum Power Dissipation:43 W
Minimum Operating Temperature:-55 °C
Package include:
10pcs*IRF510
Technical Specifications
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