CHANZON
50pcs 2SC3356 SOT-23 NPN Power BJT Bipolar Junction Transistor
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Description
- Transistor Type: NPN Silicon Power Bipolar Junction Transistor.
- Transistor Polarity: NPN Bipolar Junction Transistor.
- Specification: Total Power Dissipation(Ptot) 0.2W at ambient temperature(Ta) 25℃, Collector Current(IC) 0.1A, Maximum Collector-Base Voltage(VCBO) 20V, Maximum Collector-Emitter Voltage(VCEO) 12V, Maximum Emitter-Base Voltage(VEBO) 3V, Collector-Base Leakage Current(ICBO) 1μA, Emitter-Base Leakage Current(IEBO) 1μA.
- Application: Commonly used in a wide array of electronic applications due to its notable frequency performance of up to 7000 MHz and DC current gain(hFE) of 50 to 250.
- Package: Delivered in an anti-static bag for utmost electrostatic protection, ESD safety, and guarantee of long shelf life.
Technical Specifications
Manufacturer
CHANZON
Color
Black
Size
SOT-23
Height
1.3 cm
Length
18 cm
Width
15 cm
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.




