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DEI 2SC2879 100W Silicon NPN RF Power Transistor (2-30 MHz)

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DEI 2SC2879 100W Silicon NPN RF Power Transistor (2-30 MHz)
- 100 Watt PEP RF Power Transistor
- 2 - 30 MHz SSB Linear Power Applications
- 12.5V DC Operating Voltage
- Gap = 15.2 (type) at 100W / 28 MHz
- IMD3 = -24 dB max at 100 W (PEP)
The DEI 2SC2879 silicon NPN radio frequency power transistor is primarily designed for 2 - 30 MHz SSB linear power amplifier applications. The 2SC2879 is rated for 100 watts PEP output power at 12.5 volts DC supply with a typical gain of 15.2 db. The DEI 2SC2879 is designed to be equivalent to other brands of 2SC2879 transistors. DEI Semiconductor is a division of Palomar Electronics. For datasheets, please contact Palomar Electronics.
Country USA
Brand Design Engineering
Manufacturer DEI
Binding Automotive
ItemPartNumber 2SC2879
Model 2SC2879
ReleaseDate 2016-08-30
UPCs 719962301611
EANs 0719962301611

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Country	USA
Brand	Design Engineering
Manufacturer	DEI
Binding	Automotive
ItemPartNumber	2SC2879
Model	2SC2879
ReleaseDate	2016-08-30
UPCs	719962301611
EANs	0719962301611