LiveZilla Live Chat Software
Register/Login Login Contact UsContacts BlogBlog
Cart Items : 0 | Cart Total : R0
Books > Education & Teaching > Schools & Teaching > 128840591X
  1. Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride
    Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride
    Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride
    Image(s) provided for illustrative purposes and may differ from the actual product
  2. Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride

    Delivery: 10-20 Working Days
    Price R1381.00

Additional Information

Recently, research on the wide bandgap semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature. The ions were implanted at 200 keV with doses ranging from 1x10 13 to 1x10 15 cm -2 at room temperature. The samples were proximity cap annealed from 1200 to 1350 [degrees] C with a 500 Å thick AlN cap in a nitrogen environment. It has been found that the optical activation and implantation damage recovery are highly dependent upon ion dose and anneal temperature. The results of luminescence measurements on AlxGa1-xN made at 5 K by both photoluminescence and cathodoluminescence show that nearly complete implantation damage recovery can only be obtained after annealing at 1350 [degrees] C. The Si+N implanted GaN showed only a small amount of optical activation in the cathodoluminescence measurements at 1250 to 1350 [degrees] C. Mg doped GaN results indicated that optical activation of the Mg ions was not prevalent, and ion implantation damage might not have been removed completely at 1350 [degrees] C. The results also indicate that current AlN cap protected the implanted AlxGa1-xN layer very well during high temperature annealing without creating any significant annealing damage. These luminescence observations are consistent with the results of electrical activation studies made on these samples.


Erin N. Claunch
Please Note

The authorised South African distributor of this product is under no obligation to honour the manufacture's guarantees/warranties or to provide after-sales service.

Please note that this product is based in the USA, and is designed and labelled to be used in the USA. If the unit is powered and plugs into an electrical socket, we cannot import the unit for you due to local regulations, as a permit is required for electrical goods. Please check with us if you are unsure or need any assistance!

Please also note that certain items cannot be imported, these include Alcohol, Agricultural Remedies, Animals, Batteries, Flammable Materials, Farm Feeds, Currency, Food, Furs, Chemicals, Explosives, Medications, Plants, Poisons, Seeds, Supplements, Nutrients, Pressurized Cans, Tactical Equipment, Vitamins, Weaponry and Weaponry Accessories. In these cases, information displayed above is for reference/informational purposes only and the item will not be imported. All content is generated and displayed from an automated USA product feed, and if the item cannot be imported for any reason, including carrier restrictions and/or import or sales restrictions under South African or American law, we do reserve the right to cancel and refund the order in full. If you are not sure if we are permitted to bring in an item, please send us an e-mail with a link to the item to confirm.

Please also ensure that you are ordering the correct item for your particular application as returns to the USA are costly. Product reviews are also provided for most of our items, which can give you a good idea for possible things to look out for and the quality of the item. By clicking Add to Cart, you are confirming that the item is correct and you accept the conditions listed here.