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Transistors 2T866A silicon epitaxial-planar structures n-p-n switching. Designed for use in switching devices, secondary power supplies. 2T866A: Structure of the transistor: n-p-n; Рк т max - Constant dissipated collector power with heatsink: 30 W; fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 25 MHz; UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 200 V; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V; Iк max - Maximum permissible constant collector current: 20 A; Iк and max - Maximum permissible collector pulse current: 20 A; Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 25 mA (100 V); h21e - Static transistor current transfer ratio for circuits with a common emitter: more than 15; Sk - Collector junction capacity: not more than 400 pF; Rke us - Resistance of saturation between the collector and emitter: not more than 0.15 Ohm; t off - Off time :: no more than 450 ns