SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
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What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor â€œblack artsâ€ associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Country USA
Brand CRC Press
Manufacturer CRC Press
Binding Hardcover
UnitCount 1
EANs 9781420066852
ReleaseDate 0000-00-00

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

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Country	USA
Brand	CRC Press
Manufacturer	CRC Press
Binding	Hardcover
UnitCount	1
EANs	9781420066852
ReleaseDate	0000-00-00